MSB709-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Power - Max :

200mW

Pbfree Code :

yes

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

MATTE TIN

Transistor Type :

PNP

Current - Collector (Ic) (Max) :

100mA

Voltage - Collector Emitter Breakdown (Max) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Configuration :

Single

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Pin Count :

3

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Number of Terminations :

3