MSB710-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Surface Mount :

yes

Mounting Type :

Surface Mount

Configuration :

Single

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

500mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Pin Count :

3

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Power - Max :

200mW