MPSA93RLRMG
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- Mfr.Part #
- MPSA93RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.5A TO92
- Stock
- 11,941
- In Stock ：
- 11,941
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- HTS Code :
- 8541.21.00.95
- Collector Emitter Saturation Voltage :
- -500mV
- Element Configuration :
- Single
- Current Rating :
- -500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 500mA
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -200V
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -300V
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Base Part Number :
- MPSA93
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 200V
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 2mA, 20mA
- hFE Min :
- 25
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Elements :
- 1
- Datasheets
- MPSA93RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA93RLRMG Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA93RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 400mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA93RLRMG Applications
There are a lot of ON Semiconductor
MPSA93RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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