MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 4V
- Height :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Copper, Silver, Tin
- Current Rating :
- 500mA
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- MPSA05
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Elements :
- 1
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Published :
- 2002
- Transistor Type :
- NPN
- Weight :
- 201mg
- Packaging :
- Tape and Reel (TR)
- Mount :
- Through Hole
- Factory Lead Time :
- 15 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Width :
- 3.86mm
- Collector Emitter Saturation Voltage :
- 250mV
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- MPSA05RA
MPSA05RA Documents
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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