MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Power Dissipation :
- 625mW
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Width :
- 3.86mm
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Length :
- 4.58mm
- hFE Min :
- 100
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Saturation Voltage :
- 250mV
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Weight :
- 201mg
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Base Part Number :
- MPSA05
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Height :
- 4.58mm
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 4V
- Radiation Hardening :
- No
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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