MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MPSA05
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Width :
- 3.86mm
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Rating :
- 500mA
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Published :
- 2002
- hFE Min :
- 100
- Length :
- 4.58mm
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Breakdown Voltage :
- 60V
- Height :
- 4.58mm
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Copper, Silver, Tin
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 201mg
- Collector Emitter Saturation Voltage :
- 250mV
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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