MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 4.58mm
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- JESD-609 Code :
- e1
- Width :
- 3.86mm
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 250mV
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- MPSA05
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 60V
- Weight :
- 201mg
- Frequency :
- 100MHz
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 60V
- Terminal Position :
- BOTTOM
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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