MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Current Rating :
- -500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Base Part Number :
- MPSA92
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Height :
- 6.35mm
- Max Breakdown Voltage :
- 300V
- hFE Min :
- 25
- Frequency :
- 50MHz
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -300V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 300V
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2010
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 3
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- REACH SVHC :
- Unknown
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Width :
- 6.35mm
- Number of Elements :
- 1
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Datasheets
- MPSA92RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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