MPSA70RLRMG
- Mfr.Part #
- MPSA70RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A TO92
- Stock
- 24,168
- In Stock :
- 24,168
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Published :
- 2006
- Element Configuration :
- Single
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- hFE Min :
- 40
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Current Rating :
- -100mA
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 100mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 125MHz
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Packaging :
- Tape and Box (TB)
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 250mV
- Collector Emitter Saturation Voltage :
- -250mV
- Transition Frequency :
- 125MHz
- Voltage - Rated DC :
- -40V
- ECCN Code :
- EAR99
- Datasheets
- MPSA70RLRMG

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA70RLRMG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5mA 10V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 125MHz.A maximum collector current of 100mA volts can be achieved.
MPSA70RLRMG Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz
MPSA70RLRMG Applications
There are a lot of ON Semiconductor
MPSA70RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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