MPSA64RLRMG
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- Mfr.Part #
- MPSA64RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 3,561
- In Stock ：
- 3,561
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- OBSOLETE (Last Updated: 19 hours ago)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 125MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Continuous Collector Current :
- -500mA
- Power Dissipation :
- 625mW
- Base Part Number :
- MPSA64
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- -30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- PNP
- Frequency - Transition :
- 125MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Current Rating :
- -500mA
- Transistor Type :
- PNP - Darlington
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Datasheets
- MPSA64RLRMG
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA64RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA64RLRMG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRMG Applications
There are a lot of ON Semiconductor
MPSA64RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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