MPSA63RLRMG
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- Mfr.Part #
- MPSA63RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 12,411
- In Stock ：
- 12,411
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- JESD-609 Code :
- e1
- Published :
- 2007
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.75
- Terminal Position :
- BOTTOM
- Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- hFE Min :
- 5000
- Frequency - Transition :
- 125MHz
- Continuous Collector Current :
- -500mA
- Transition Frequency :
- 125MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- MPSA63
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Mount :
- Through Hole
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- MPSA63RLRMG
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA63RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA63RLRMG Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA63RLRMG Applications
There are a lot of ON Semiconductor
MPSA63RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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