MPSA44G
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- Mfr.Part #
- MPSA44G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO92
- Stock
- 3,723
- In Stock ：
- 3,723
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- hFE Min :
- 40
- Length :
- 5.1816mm
- Height :
- 5.334mm
- Collector Emitter Breakdown Voltage :
- 400V
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 500nA
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transition Frequency :
- 20MHz
- Collector Emitter Saturation Voltage :
- 750mV
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Current Rating :
- 300mA
- Max Collector Current :
- 300mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Base Part Number :
- MPSA44
- Collector Base Voltage (VCBO) :
- 500V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Width :
- 4.191mm
- Collector Emitter Voltage (VCEO) :
- 400V
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 400V
- Datasheets
- MPSA44G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA44G Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
MPSA44G Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 20MHz
MPSA44G Applications
There are a lot of ON Semiconductor
MPSA44G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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