MPSA42ZL1G
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- Mfr.Part #
- MPSA42ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 45,173
- In Stock ：
- 45,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 50MHz
- Current Rating :
- 500mA
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Packaging :
- Tape and Box (TB)
- Max Breakdown Voltage :
- 300V
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 20 hours ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Surface Mount :
- No
- Base Part Number :
- MPSA42
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 300V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 25
- Collector Emitter Voltage (VCEO) :
- 300V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 300V
- Published :
- 2009
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 300V
- Number of Terminations :
- 3
- Frequency :
- 50MHz
- Datasheets
- MPSA42ZL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42ZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA42ZL1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42ZL1G Applications
There are a lot of ON Semiconductor
MPSA42ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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