MPSA29

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

1.2V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

hFE Min :

10000

Power Dissipation :

625mW

Number of Terminations :

3

Polarity :

NPN

Collector Base Voltage (VCBO) :

100V

Transition Frequency :

200MHz

Published :

2005

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

100V

Voltage - Rated DC :

100V

Collector Emitter Breakdown Voltage :

100V

Max Breakdown Voltage :

100V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current Rating :

800mA

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Peak Reflow Temperature (Cel) :

240

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Darlington

Mounting Type :

Through Hole

Frequency - Transition :

125MHz

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Number of Pins :

3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

12V

Base Part Number :

MPSA29

Packaging :

Bulk

Element Configuration :

Single

Continuous Collector Current :

500mA

Weight :

201mg

Length :

4.7mm

Height :

4.7mm

Width :

3.93mm

Pbfree Code :

yes

Max Power Dissipation :

625mW