MPSA20G
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- Mfr.Part #
- MPSA20G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.1A TO92
- Stock
- 49,689
- In Stock ：
- 49,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 40
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 250mV
- Transition Frequency :
- 125MHz
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 40V
- Number of Terminations :
- 3
- Current Rating :
- 100mA
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 4V
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 4V
- Frequency :
- 125MHz
- Gain Bandwidth Product :
- 125MHz
- ECCN Code :
- EAR99
- Base Part Number :
- MPSA20
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2006
- JESD-609 Code :
- e1
- Datasheets
- MPSA20G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA20G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
MPSA20G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz
MPSA20G Applications
There are a lot of ON Semiconductor
MPSA20G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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