MPSA14RLRPG
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- Mfr.Part #
- MPSA14RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 1,121
- In Stock ：
- 1,121
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 500mA
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Part Number :
- MPSA14
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 1.5V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Transition Frequency :
- 125MHz
- Emitter Base Voltage (VEBO) :
- 10V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Frequency - Transition :
- 125MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity :
- NPN
- Datasheets
- MPSA14RLRPG
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA14RLRPG Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA14RLRPG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRPG Applications
There are a lot of ON Semiconductor
MPSA14RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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