MPSA06RLRMG
- Mfr.Part #
- MPSA06RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 10,944
- In Stock :
- 10,944
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Qualification Status :
- COMMERCIAL
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Power - Max :
- 625mW
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- Frequency - Transition :
- 100MHz
- JESD-30 Code :
- O-PBCY-T3
- Transition Frequency :
- 100MHz
- Datasheets
- MPSA06RLRMG

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA06RLRMG Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MPSA06RLRMG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA06RLRMG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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