MPS8099RLRPG
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- Mfr.Part #
- MPS8099RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 19,739
- In Stock ：
- 19,739
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- hFE Min :
- 100
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Base Part Number :
- MPS8099
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Current Rating :
- 500mA
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 400mV
- Datasheets
- MPS8099RLRPG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS8099RLRPG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS8099RLRPG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRPG Applications
There are a lot of ON Semiconductor
MPS8099RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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