MPS751
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- Mfr.Part #
- MPS751
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock ：
- 255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Weight :
- 201mg
- Collector Base Voltage (VCBO) :
- -80V
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 4.58mm
- Max Collector Current :
- 2A
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 75
- Width :
- 3.86mm
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Peak Reflow Temperature (Cel) :
- 240
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 625mW
- Transition Frequency :
- 75MHz
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Frequency :
- 75MHz
- Base Part Number :
- MPS751
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Published :
- 2002
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- -60V
- Current Rating :
- -2A
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Height :
- 4.58mm
- Gain Bandwidth Product :
- 75MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- MPS751
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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