MPS751 TIN/LEAD
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- Mfr.Part #
- MPS751 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 31,299
- In Stock ：
- 31,299
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Current - Collector (Ic) (Max) :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Frequency - Transition :
- 75MHz
- Operating Temperature :
- -65°C~150°C TJ
- Power - Max :
- 625mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Datasheets
- MPS751 TIN/LEAD
PNP -65°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 TIN/LEAD Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
MPS751 TIN/LEAD Features
the DC current gain for this device is 75 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
MPS751 TIN/LEAD Applications
There are a lot of Central Semiconductor Corp
MPS751 TIN/LEAD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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