MPS751
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- Mfr.Part #
- MPS751
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock ：
- 255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 240
- Frequency :
- 75MHz
- Packaging :
- Bulk
- Mount :
- Through Hole
- Current Rating :
- -2A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.86mm
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- hFE Min :
- 75
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 80V
- Transition Frequency :
- 75MHz
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 75MHz
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Published :
- 2002
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Height :
- 4.58mm
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -60V
- Number of Elements :
- 1
- Weight :
- 201mg
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -80V
- Length :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MPS751
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MPS751
MPS751 Documents
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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