MPS751
- Mfr.Part #
- MPS751
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock :
- 255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -80V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MPS751
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 4.58mm
- Factory Lead Time :
- 6 Weeks
- Frequency :
- 75MHz
- Transition Frequency :
- 75MHz
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Pin Count :
- 3
- Current Rating :
- -2A
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 75
- Length :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Voltage - Rated DC :
- -60V
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- 500mV
- Width :
- 3.86mm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 75MHz
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 240
- Max Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Weight :
- 201mg
- Packaging :
- Bulk
- Datasheets
- MPS751
MPS751 Documents
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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