MPS751
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- Mfr.Part #
- MPS751
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock ：
- 255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.86mm
- hFE Min :
- 75
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- -2A
- Transition Frequency :
- 75MHz
- Max Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- -60V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Height :
- 4.58mm
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Frequency :
- 75MHz
- Published :
- 2002
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Gain Bandwidth Product :
- 75MHz
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- -80V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Base Part Number :
- MPS751
- Factory Lead Time :
- 6 Weeks
- Weight :
- 201mg
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Datasheets
- MPS751
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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