MPS751-D26Z
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- Mfr.Part #
- MPS751-D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 12,438
- In Stock ：
- 12,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Frequency :
- 75MHz
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Weight :
- 201mg
- Power Dissipation :
- 625mW
- Published :
- 2017
- Number of Pins :
- 3
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MPS751
- Max Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 75MHz
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- -80V
- hFE Min :
- 75
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- MPS751-D26Z
PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS751-D26Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 2A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at -5V for high efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
MPS751-D26Z Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
MPS751-D26Z Applications
There are a lot of ON Semiconductor
MPS751-D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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