MPS6717
- Mfr.Part #
- MPS6717
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 7,024
- In Stock :
- 7,024
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Reach Compliance Code :
- not_compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.75
- Current Rating :
- 1A
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 50MHz
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Voltage - Rated DC :
- 80V
- Published :
- 2006
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 1W
- Base Part Number :
- MPS6717
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 80
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Datasheets
- MPS6717
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPS6717 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MPS6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPS6717 Applications
There are a lot of ON Semiconductor
MPS6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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