MPS650RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 1A 2V

Reach Compliance Code :

not_compliant

JESD-30 Code :

O-PBCY-T3

Transistor Type :

NPN

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

40V

Mount :

Through Hole

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Polarity/Channel Type :

NPN

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Gain Bandwidth Product :

75MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Max Collector Current :

2A

Number of Elements :

1

Qualification Status :

Not Qualified

Base Part Number :

MPS650

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

240

Element Configuration :

Single

Collector Base Voltage (VCBO) :

60V

Published :

2005

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

40V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e0

hFE Min :

75

Transition Frequency :

75MHz

Collector Emitter Saturation Voltage :

500mV

Max Power Dissipation :

625mW

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Contains Lead

Pin Count :

3

Collector Emitter Voltage (VCEO) :

500mV

Current Rating :

2A