MPS650 TIN/LEAD
- Mfr.Part #
- MPS650 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-92-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A TO-92
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Style :
- Through Hole
- Series :
- MPS650
- Supplier Device Package :
- TO-92-3
- Transistor Polarity :
- NPN
- Minimum Operating Temperature :
- - 65 C
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Product Status :
- Active
- Frequency - Transition :
- 75MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A, 2V
- Configuration :
- Single
- Package / Case :
- TO-92-3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Package :
- Bulk
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Power - Max :
- 625 mW
- Packaging :
- Bulk
- Continuous Collector Current :
- 2 A
- Current - Collector (Ic) (Max) :
- 2 A
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- MPS650 TIN/LEAD
NPN -65°C ~ 150°C (TJ) 100nA (ICBO) TO-92-3 Bulk Through Hole
MPS650 TIN/LEAD Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Continuous collector voltages of 2 A should be maintained to achieve high efficiency.TO-92-3 is the supplier device package for this product.This device displays a 40 V maximum voltage - Collector Emitter Breakdown.
MPS650 TIN/LEAD Features
the DC current gain for this device is 75 @ 1A, 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TO-92-3
MPS650 TIN/LEAD Applications
There are a lot of Central Semiconductor
MPS650 TIN/LEAD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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