MMDTA42-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

SWITCHING

Radiation Hardening :

No

Transition Frequency :

50MHz

JESD-609 Code :

e3

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Published :

2007

Factory Lead Time :

19 Weeks

Max Breakdown Voltage :

300V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Emitter Base Voltage (VEBO) :

6V

Number of Elements :

2

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

300V

hFE Min :

25

Collector Emitter Breakdown Voltage :

300V

Width :

1.6mm

Frequency :

50MHz

Transistor Type :

2 NPN (Dual)

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Length :

3mm

Max Power Dissipation :

300mW

Weight :

29.993795mg

Pbfree Code :

yes

Number of Pins :

6

Polarity :

NPN

Gain Bandwidth Product :

50MHz

REACH SVHC :

No SVHC

Package / Case :

SOT-23-6

Collector Base Voltage (VCBO) :

300V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pin Count :

6

Height :

1.1mm