MMDTA06-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN

Terminal Finish :

Matte Tin (Sn)

Max Collector Current :

500mA

Power - Max :

900mW

Additional Feature :

High Reliability

Transistor Type :

2 NPN (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Gain Bandwidth Product :

163MHz

Emitter Base Voltage (VEBO) :

4V

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Voltage (VCEO) :

80V

Pin Count :

6

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Published :

2013

Collector Emitter Breakdown Voltage :

80V

Number of Pins :

6

Transition Frequency :

163MHz

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

80V

Number of Elements :

2

Max Power Dissipation :

1.28W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MMDTA06

Number of Terminations :

6

Element Configuration :

Dual

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

250mV

Package / Case :

SOT-23-6

Max Breakdown Voltage :

80V