MMDT5451-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

100MHz

Continuous Collector Current :

-200mA

Base Part Number :

MMDT5451

Voltage - Rated DC :

160V

Element Configuration :

Dual

Max Collector Current :

200mA

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Terminations :

6

Transistor Type :

NPN, PNP

Collector Base Voltage (VCBO) :

180V

Polarity :

NPN, PNP

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Saturation Voltage :

200mV

ECCN Code :

EAR99

Length :

2.2mm

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Number of Elements :

2

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V / 60 @ 10mA 5V

Collector Emitter Breakdown Voltage :

150V

Published :

2007

Packaging :

Tape and Reel (TR)

Weight :

6.010099mg

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Frequency :

300MHz

Factory Lead Time :

19 Weeks

Voltage - Collector Emitter Breakdown (Max) :

160V 150V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation :

200mW

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

200mV

Width :

1.35mm

Terminal Finish :

Matte Tin (Sn)

Gain Bandwidth Product :

300MHz

Pin Count :

6

hFE Min :

60

Height :

1mm

Current Rating :

200mA

REACH SVHC :

No SVHC

Max Breakdown Voltage :

150V