MMDT4413-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Weight :

6.010099mg

Width :

1.35mm

RoHS Status :

ROHS3 Compliant

Length :

2.2mm

REACH SVHC :

No SVHC

Gain Bandwidth Product :

250MHz

Radiation Hardening :

No

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V / 100 @ 150mA 2V

Factory Lead Time :

15 Weeks

Transition Frequency :

250MHz

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

40V

Operating Temperature :

-65°C~150°C TJ

Max Breakdown Voltage :

40V

Voltage - Rated DC :

40V

Base Part Number :

MMDT4413

Element Configuration :

Dual

JESD-609 Code :

e3

Frequency :

250MHz

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

100

ECCN Code :

EAR99

Polarity :

NPN, PNP

Published :

2007

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Lead Free :

Lead Free

Turn On Time-Max (ton) :

35ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

200mW

Collector Emitter Saturation Voltage :

750mV

Max Collector Current :

600mA

Transistor Application :

SWITCHING

Continuous Collector Current :

600mA

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Height :

1mm

Frequency - Transition :

250MHz 200MHz

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

40V

Mounting Type :

Surface Mount

Current Rating :

600mA

Transistor Element Material :

SILICON