MMDT4146-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Surface Mount

Number of Pins :

6

Max Breakdown Voltage :

25V

Length :

2.2mm

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Width :

1.35mm

hFE Min :

120

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

235

JESD-609 Code :

e0

Current Rating :

200mA

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Weight :

6.010099mg

Power Dissipation :

200mW

Height :

1mm

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

200mA

Terminal Finish :

Tin/Lead (Sn85Pb15)

Voltage - Rated DC :

40V

Package / Case :

SOT-363

Time@Peak Reflow Temperature-Max (s) :

10

Frequency :

300MHz

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

DC Current Gain-Min (hFE) :

60

Collector Emitter Breakdown Voltage :

25V

Emitter Base Voltage (VEBO) :

4V

Reach Compliance Code :

not_compliant

Polarity :

NPN, PNP

Pin Count :

6

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

25V

Published :

2007

Number of Elements :

2

Transition Frequency :

250MHz

Number of Terminations :

6

Terminal Form :

Gull wing

Gain Bandwidth Product :

300MHz