MMDT3906VC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time-Max (ton) :

70ns

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Current Rating :

-200mA

Transistor Type :

2 PNP (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Max Collector Current :

200mA

Turn Off Time-Max (toff) :

300ns

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-40V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Terminal Form :

Flat

Factory Lead Time :

19 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Height :

600μm

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Termination :

SMD/SMT

Number of Terminations :

6

Width :

1.2mm

Collector Emitter Voltage (VCEO) :

40V

Number of Pins :

6

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

Published :

2005

Length :

1.6mm

Polarity :

PNP

Collector Base Voltage (VCBO) :

40V

Frequency :

250MHz

Base Part Number :

MMDT3906VC

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Weight :

3.005049mg

Pbfree Code :

yes

Power Dissipation :

150mW

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-400mV

Pin Count :

6

Transition Frequency :

250MHz

Mounting Type :

Surface Mount

hFE Min :

60

Gain Bandwidth Product :

250MHz

Number of Elements :

2