MMDT3906VC-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

60

Power Dissipation :

150mW

Published :

2005

Peak Reflow Temperature (Cel) :

260

Height :

600μm

Collector Base Voltage (VCBO) :

40V

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

MMDT3906VC

Current Rating :

-200mA

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

40V

Package / Case :

SOT-563, SOT-666

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Turn On Time-Max (ton) :

70ns

Collector Emitter Saturation Voltage :

-400mV

Width :

1.2mm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn Off Time-Max (toff) :

300ns

Transistor Type :

2 PNP (Dual)

Weight :

3.005049mg

Max Power Dissipation :

150mW

Length :

1.6mm

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

40V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Collector Emitter Voltage (VCEO) :

40V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Factory Lead Time :

19 Weeks

Max Collector Current :

200mA

Transistor Element Material :

SILICON

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Frequency :

250MHz

Number of Terminations :

6

Gain Bandwidth Product :

250MHz

Voltage - Rated DC :

-40V

Termination :

SMD/SMT

Pbfree Code :

yes

Transition Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Form :

Flat