MMBTA42
- Mfr.Part #
- MMBTA42
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.35W 0.5A 300V Trans
- Stock
- 46,742
- In Stock :
- 46,742
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300V
- hFE Min :
- 25
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 300V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 300V
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBTA42
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Additional Feature :
- High Reliability
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Published :
- 2008
- Width :
- 1.4mm
- Height :
- 1.1mm
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Factory Lead Time :
- 19 Weeks
- Collector Emitter Breakdown Voltage :
- 300V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Termination :
- SMD/SMT
- Power Dissipation :
- 300mW
- Max Junction Temperature (Tj) :
- 150°C
- Max Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 50MHz
- Current Rating :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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