MMBTA06
- Mfr.Part #
- MMBTA06
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23
- Stock
- 26,354
- In Stock :
- 26,354
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- Additional Feature :
- High Reliability
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Base Part Number :
- MMBTA06
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.05mm
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- hFE Min :
- 100
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Width :
- 1.4mm
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 80V
- Series :
- Automotive, AEC-Q101
- Height :
- 1.1mm
- Voltage - Rated DC :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Power Dissipation :
- 310mW
- Max Junction Temperature (Tj) :
- 150°C
- Emitter Base Voltage (VEBO) :
- 4V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Continuous Collector Current :
- 500mA
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Datasheets
- MMBTA06

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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