MMBT5401

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

80

Collector Emitter Voltage (VCEO) :

500mV

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

300mW

Power - Max :

300mW

Continuous Collector Current :

-600mA

Emitter Base Voltage (VEBO) :

-5V

Max Collector Current :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

150V

Transition Frequency :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Mount :

Surface Mount

Weight :

200.998119mg

Frequency - Transition :

100MHz

Element Configuration :

Single

Terminal Form :

Gull wing

Published :

2011