MMBT4403LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

JESD-609 Code :

e3

Published :

2007

Transistor Type :

PNP

Surface Mount :

yes

Width :

2.64mm

Max Power Dissipation :

225mW

Factory Lead Time :

10 Weeks

Base Part Number :

MMBT4403

Collector Emitter Voltage (VCEO) :

40V

Weight :

4.535924g

hFE Min :

30

Number of Terminations :

3

Number of Elements :

1

Terminal Position :

Dual

Transistor Element Material :

SILICON

Height :

1.11mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Polarity/Channel Type :

PNP

Length :

3.04mm

Transition Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

8.5pF

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gain Bandwidth Product :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Emitter Base Voltage (VEBO) :

5V

Current Rating :

600mA

Frequency :

200MHz

REACH SVHC :

No SVHC

Turn Off Time-Max (toff) :

255ns

Collector Base Voltage (VCBO) :

40V

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

40V

Power Dissipation :

300mW

Max Collector Current :

600mA

ECCN Code :

EAR99

Lead Free :

Lead Free

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Collector Emitter Saturation Voltage :

-750mV

Element Configuration :

Single

Voltage - Rated DC :

-40V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Pbfree Code :

yes