MMBT4401LT3G
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- Mfr.Part #
- MMBT4401LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 15,237
- In Stock ：
- 15,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Radiation Hardening :
- No
- hFE Min :
- 100
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- MMBT4401
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Height :
- 1.11mm
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 10 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 750mV
- Length :
- 3.04mm
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 600mA
- Frequency :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Power - Max :
- 300mW
- Width :
- 2.64mm
- Voltage - Rated DC :
- 40V
- Pin Count :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Max Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Power Dissipation :
- 225mW
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 255ns
- Datasheets
- MMBT4401LT3G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401LT3G Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 600mA volts is possible.
MMBT4401LT3G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401LT3G Applications
There are a lot of ON Semiconductor
MMBT4401LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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