MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.3W 0.6A 60V Transis
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 250MHz
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Frequency :
- 250MHz
- Voltage - Rated DC :
- 40V
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 600mA
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 250MHz
- Turn Off Time-Max (toff) :
- 255ns
- hFE Min :
- 40
- Base Part Number :
- MMBT4401
- Factory Lead Time :
- 19 Weeks
- Height :
- 1.1mm
- Max Breakdown Voltage :
- 40V
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 310mW
- Peak Reflow Temperature (Cel) :
- 260
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 750mV
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Length :
- 3.05mm
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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