MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.3W 0.6A 60V Transis
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- Series :
- Automotive, AEC-Q101
- Additional Feature :
- High Reliability
- Number of Pins :
- 3
- Published :
- 2012
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 600mA
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 250MHz
- Max Junction Temperature (Tj) :
- 150°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- hFE Min :
- 40
- Length :
- 3.05mm
- Collector Emitter Saturation Voltage :
- 750mV
- Continuous Collector Current :
- 600mA
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- 40V
- Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 19 Weeks
- Base Part Number :
- MMBT4401
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Turn Off Time-Max (toff) :
- 255ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Height :
- 1.1mm
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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