MJE2955TTU
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- Mfr.Part #
- MJE2955TTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220-3
- Stock
- 1,129
- In Stock ：
- 1,129
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- -70V
- Weight :
- 1.8g
- Max Collector Current :
- 10A
- Power - Max :
- 75W
- Voltage - Rated DC :
- -60V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Length :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 700µA
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 600mW
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Published :
- 2001
- Base Part Number :
- MJE2955
- Polarity/Channel Type :
- PNP
- Width :
- 6.35mm
- Lifecycle Status :
- LIFETIME (Last Updated: 2 months ago)
- Transition Frequency :
- 2MHz
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Current Rating :
- -10A
- hFE Min :
- 20
- Gain Bandwidth Product :
- 2MHz
- Power Dissipation :
- 600mW
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -1.1V
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 2MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Datasheets
- MJE2955TTU
PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE2955TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of -1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJE2955TTU Applications
There are a lot of ON Semiconductor
MJE2955TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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