MJE210T
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- Mfr.Part #
- MJE210T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A TO126
- Stock
- 9,148
- In Stock ：
- 9,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Emitter Base Voltage (VEBO) :
- 8V
- Max Power Dissipation :
- 15W
- RoHS Status :
- Non-RoHS Compliant
- hFE Min :
- 70
- Current Rating :
- -5A
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 65MHz
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Current - Collector (Ic) (Max) :
- 5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 65MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Collector Emitter Saturation Voltage :
- 1.8V
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Pin Count :
- 3
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Base Part Number :
- MJE210
- Surface Mount :
- No
- Datasheets
- MJE210T
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE210T Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of 1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
MJE210T Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210T Applications
There are a lot of ON Semiconductor
MJE210T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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