MJE243
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- Mfr.Part #
- MJE243
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 4A 100V TO225AA
- Stock
- 21,081
- In Stock ：
- 21,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 15W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 2.9972mm
- Pin Count :
- 3
- Height :
- 11.0998mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Length :
- 7.7978mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Max Collector Current :
- 4A
- Frequency :
- 40MHz
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Bulk
- Number of Elements :
- 1
- Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 600mV
- Current Rating :
- 4A
- Halogen Free :
- Halogen Free
- Surface Mount :
- No
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 40MHz
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Weight :
- 4.535924g
- Datasheets
- MJE243
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.
MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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