MJE210G
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- Mfr.Part #
- MJE210G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A TO126
- Stock
- 74
- In Stock ：
- 74
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 7 Weeks
- Transition Frequency :
- 65MHz
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Voltage - Rated DC :
- -25V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 70
- Power Dissipation :
- 15W
- Length :
- 7.7978mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Weight :
- 4.535924g
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 65MHz
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 11.0998mm
- Base Part Number :
- MJE210
- Max Collector Current :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 15W
- Collector Emitter Saturation Voltage :
- 1.8V
- Emitter Base Voltage (VEBO) :
- 8V
- Packaging :
- Bulk
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Frequency :
- 65MHz
- Current Rating :
- -5A
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 25V
- Mounting Type :
- Through Hole
- Width :
- 2.9972mm
- Datasheets
- MJE210G
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE210G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJE210G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210G Applications
There are a lot of ON Semiconductor
MJE210G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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