MJE200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Transition Frequency :

65MHz

JESD-609 Code :

e3

Weight :

4.535924g

Max Power Dissipation :

15W

Max Collector Current :

5A

Operating Temperature :

-65°C~150°C TJ

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

25V

Gain Bandwidth Product :

65MHz

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

40V

Collector Emitter Saturation Voltage :

1.8V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

11.0998mm

Emitter Base Voltage (VEBO) :

8V

Collector Emitter Breakdown Voltage :

40V

hFE Min :

70

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MJE200

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Pins :

3

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Voltage - Rated DC :

25V

Width :

2.9972mm

Lead Free :

Lead Free

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2000

Frequency :

65MHz

Package / Case :

TO-225AA, TO-126-3

Pbfree Code :

yes

ECCN Code :

EAR99

Element Configuration :

Single

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Length :

7.7978mm

Power Dissipation :

15W

Polarity/Channel Type :

NPN