MJD50TF
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- Mfr.Part #
- MJD50TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 1,028
- In Stock ：
- 1,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.73mm
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Width :
- 6.22mm
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 1.56W
- Current Rating :
- 1A
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 400V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.37mg
- Base Part Number :
- MJD50
- Current - Collector Cutoff (Max) :
- 200μA
- Transistor Type :
- NPN
- Frequency :
- 10MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.38mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 400V
- Published :
- 2012
- Additional Feature :
- High Reliability
- Max Collector Current :
- 1A
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 30
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 500V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.56W
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400V
- Voltage - Rated DC :
- 400V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Transition Frequency :
- 10MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 10MHz
- Number of Pins :
- 3
- Datasheets
- MJD50TF
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NPN 150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD50TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 10MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1A volts.
MJD50TF Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50TF Applications
There are a lot of ON Semiconductor
MJD50TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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