MJD50T4G
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- Mfr.Part #
- MJD50T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 23,035
- In Stock ：
- 23,035
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 200μA
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.22mm
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.56W
- Contact Plating :
- Tin
- Length :
- 6.73mm
- Base Part Number :
- MJD50
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- hFE Min :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 2.38mm
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Transition Frequency :
- 10MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2005
- Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 500V
- Transistor Type :
- NPN
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Power Dissipation :
- 1.56W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 10MHz
- Max Breakdown Voltage :
- 400V
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 1A
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Datasheets
- MJD50T4G
NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD50T4G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD50T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50T4G Applications
There are a lot of ON Semiconductor
MJD50T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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