MJD50
- Mfr.Part #
- MJD50
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 28,618
- In Stock :
- 28,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 1V
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 10MHz
- Published :
- 2009
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MJD50
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- 500V
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- hFE Min :
- 30
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 1A
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.56W
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 200μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 400V
- Voltage - Rated DC :
- 400V
- Collector Emitter Saturation Voltage :
- 1V
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 10MHz
- Datasheets
- MJD50

NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD50 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MJD50 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50 Applications
There are a lot of ON Semiconductor
MJD50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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