MJD50G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1V

Voltage - Rated DC :

400V

Current - Collector Cutoff (Max) :

200μA

Power Dissipation :

1.56W

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

400V

Height :

2.38mm

Base Part Number :

MJD50

Gain Bandwidth Product :

10MHz

hFE Min :

30

Frequency :

10MHz

Transistor Element Material :

SILICON

Packaging :

Tube

Width :

6.22mm

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

500V

Pbfree Code :

yes

Number of Terminations :

2

Radiation Hardening :

No

Transistor Type :

NPN

Published :

2006

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

400V

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

COLLECTOR

Pin Count :

3

Current Rating :

1A

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Element Configuration :

Single

Transition Frequency :

10MHz

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Number of Pins :

3

Max Power Dissipation :

1.56W

Operating Temperature :

-65°C~150°C TJ