MJD50T4
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- Mfr.Part #
- MJD50T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR NPN 1A 400V DPAK
- Stock
- 124,724
- In Stock ：
- 124,724
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.73mm
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- hFE Min :
- 30
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 200μA
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Base Part Number :
- MJD50
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 500V
- Factory Lead Time :
- 8 Weeks
- Frequency :
- 10MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 10MHz
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 400V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.56W
- Packaging :
- Cut Tape (CT)
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1.56W
- Number of Terminations :
- 2
- Transistor Type :
- NPN
- Height :
- 2.38mm
- Operating Temperature :
- -65°C~150°C TJ
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 10MHz
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Max Breakdown Voltage :
- 400V
- Width :
- 6.22mm
- Current Rating :
- 1A
- Datasheets
- MJD50T4
NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD50T4G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD50T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50T4G Applications
There are a lot of ON Semiconductor
MJD50T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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