MJ15025
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- Mfr.Part #
- MJ15025
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 250V 16A TO3
- Stock
- 570
- In Stock ：
- 570
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 4MHz
- Number of Terminations :
- 2
- Transition Frequency :
- 4MHz
- Collector Emitter Saturation Voltage :
- 1.4V
- Packaging :
- Tray
- Collector Base Voltage (VCBO) :
- 400V
- Length :
- 39.37mm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 2
- Width :
- 26.67mm
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -250V
- Pbfree Code :
- yes
- Max Collector Current :
- 16A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- TO-204AA, TO-3
- Terminal Position :
- BOTTOM
- hFE Min :
- 15
- Max Power Dissipation :
- 250W
- Frequency :
- 4MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 2
- Collector Emitter Breakdown Voltage :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500μA
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 250V
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Published :
- 2006
- Current Rating :
- -16A
- Polarity/Channel Type :
- PNP
- Height :
- 8.51mm
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 250W
- Datasheets
- MJ15025
PNP -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15025G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 8A 4V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -16A.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts can be achieved.
MJ15025G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJ15025G Applications
There are a lot of ON Semiconductor
MJ15025G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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