MJ15022
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- Mfr.Part #
- MJ15022
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 16A TO3
- Stock
- 37,343
- In Stock ：
- 37,343
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Package / Case :
- TO-204AA, TO-3
- Frequency :
- 4MHz
- Current Rating :
- 16A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 200V
- hFE Min :
- 15
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 16A
- Lead Free :
- Lead Free
- Published :
- 2006
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Width :
- 26.67mm
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- PIN/PEG
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 200V
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.4V
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Length :
- 39.37mm
- Collector Base Voltage (VCBO) :
- 350V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Packaging :
- Tray
- Pin Count :
- 2
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 4MHz
- Max Power Dissipation :
- 250W
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Power Dissipation :
- 250W
- Height :
- 8.51mm
- Number of Pins :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJ15022
MJ15022 Documents
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ15022G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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