MJ15022
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- Mfr.Part #
- MJ15022
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 16A TO3
- Stock
- 37,343
- In Stock ：
- 37,343
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Published :
- 2006
- Height :
- 8.51mm
- Width :
- 26.67mm
- Length :
- 39.37mm
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 200V
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 200V
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 350V
- Collector Emitter Saturation Voltage :
- 1.4V
- JESD-609 Code :
- e3
- Frequency :
- 4MHz
- Packaging :
- Tray
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 2
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 4MHz
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 2
- Current Rating :
- 16A
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 250W
- hFE Min :
- 15
- Package / Case :
- TO-204AA, TO-3
- Max Collector Current :
- 16A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 4MHz
- Current - Collector Cutoff (Max) :
- 500μA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 250W
- Pbfree Code :
- yes
- Datasheets
- MJ15022
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ15022G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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