MJ15016
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- Mfr.Part #
- MJ15016
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 15A TO3
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 180W
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 180W
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 2
- Package / Case :
- TO-204AA, TO-3
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Radiation Hardening :
- No
- Width :
- 26.67mm
- Operating Temperature :
- -65°C~200°C TJ
- Frequency :
- 18MHz
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 15A
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Height :
- 8.51mm
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -120V
- Power - Max :
- 115W
- Number of Elements :
- 1
- Current Rating :
- -15A
- Current - Collector Cutoff (Max) :
- 100μA
- Emitter Base Voltage (VEBO) :
- 7V
- Surface Mount :
- No
- Contact Plating :
- Tin
- hFE Min :
- 10
- Published :
- 2006
- Gain Bandwidth Product :
- 18MHz
- Terminal Form :
- PIN/PEG
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Length :
- 39.37mm
- Case Connection :
- COLLECTOR
- Pin Count :
- 2
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Base Voltage (VCBO) :
- 200V
- Transition Frequency :
- 2.2MHz
- Number of Terminations :
- 2
- Packaging :
- Tray
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Collector Emitter Voltage (VCEO) :
- 120V
- Datasheets
- MJ15016
PNP -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15016G Overview
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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