MCH6602-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

350mA

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 80mA, 4V

Input Capacitance (Ciss) (Max) @ Vds :

7pF @ 10V

Pbfree Code :

yes

Rise Time :

65ns

Lifecycle Status :

LIFETIME (Last Updated: 11 hours ago)

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Published :

2007

Turn-Off Delay Time :

155 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

120 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Gate Charge (Qg) (Max) @ Vgs :

1.58nC @ 10V

ECCN Code :

EAR99

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Height :

850μm

Package / Case :

6-SMD, Flat Leads

JESD-609 Code :

e6

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

10V

Width :

1.6mm

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Element Configuration :

Dual

Power Dissipation :

800mW

Number of Pins :

6

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

19 ns

Pin Count :

6

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

800mW